Crossed-field Microwave Device. Principal Elements of by G. Mourier

By G. Mourier

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Extra resources for Crossed-field Microwave Device. Principal Elements of Crossed-Field Devices

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Tinues to increase with increasing AV even though the susceptive current is decreasing. This is the region in which normal "frequency pushing" is observed. When the amount of collection current is limited, increasing the dc voltage causes the position of the space-charge bunch to advance with respect to a synchronous frame of reference and to change the susceptive current from a high capacitive value continuously through zero to an inductive value. It is in this crossover region that voltage tuning takes place.

No quantitative results are available; however, it seems necessary for obtaining approximately the theoretical values of the efficiency that the tolerances on the different parameters of the line should be better than a few percent. IV. Noise Signal-to-noise ratio measurements (11) are possible if the tube itself is used as a local oscillator, so that the frequency variations due to the ripples of the power supply cancel out, but it is not possible to separate the two noise sidebands. Figure 17 shows noise per cps-to-signal ratio as a function of frequency distance from the oscillating frequency.

IV. Noise Signal-to-noise ratio measurements (11) are possible if the tube itself is used as a local oscillator, so that the frequency variations due to the ripples of the power supply cancel out, but it is not possible to separate the two noise sidebands. Figure 17 shows noise per cps-to-signal ratio as a function of frequency distance from the oscillating frequency. It is of the order of —140 db and about 10 db higher than in an O-type back­ ward wave tube. With a highly stabilized power supply, Krulee (12) measured the rms frequency deviation of an S-band tube and found 6-13 kc compared to 1-10 kc for an O-type backward wave oscillator.

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