Deep-Submicron CMOS ICs - From Basics to ASICs (Second by Harry Veendrick

By Harry Veendrick

These days, CMOS applied sciences account for nearly ninety% of all built-in circuits (ICs). This publication presents a vital advent to CMOS ICs. The contents of this e-book are dependent upon a past ebook, entitled 'MOS Ics', which was once released in Dutch and English by means of Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively.
This e-book includes cutting-edge fabric, but in addition makes a speciality of elements of scaling as much as and past 0.1 mm CMOS applied sciences and designs. It truly describes the basic CMOS working rules and provides titanic perception into quite a few elements of layout, implementation and alertness. unlike different works on this subject, the e-book explores all linked disciplines of deep-submicron CMOS ICs, together with physics, layout, know-how and packaging, low-power layout and sign integrity. The textual content relies upon in-house Philips courseware, which, so far, has been accomplished via greater than 1500 engineers. conscientiously dependent and enriched via 1000s of figures, photograhs and in-depth workouts, the booklet is well-suited for the aim of self-study.
This moment variation includes a few corrections and is totally up to date with admire to the former one. within the one-and-a-half years of its existance, the 1st variation has already been utilized in greater than ten in-house classes. a number of typing blunders and so on, which confirmed up in the course of those classes, were corrected. in addition, lots of the chapters were up-to-date with cutting-edge fabric. Numbers that describe developments and roadmaps were up-to-date to boot, to allow the contents of this publication be precious for a minimum of one other 5 years.

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Additional resources for Deep-Submicron CMOS ICs - From Basics to ASICs (Second Edition)

Sample text

3 Electrostatic discharge (ESD) and its protection . 390 . . . . . . 4 Electromigration ....... 5 Hot-carrier degradation . . . . . .. . 398 . . . . . . 3 Design for signal integrity . . . . . . 1 Introduction. 2 Clock distribution and critical timing issues . . 3 Clock generation and synchronisation in different . 408 (clock) domains on a chip ..... . . . 4 Phenomena related to large current fluctuations . 5 The influence of the interconnection (metallisation . 426 and dielectrics) .

The Fermi level Ef in a p-type semiconductor is situated near the valence band Ev, while it is close to the conduction band E in an n-type semiconductor. The above theory concerning the different types of semiconductors and their respective energy 8 band diagrams will now be used to explain the behaviour of the MOS transistor. This explanation is preceded by a description of the structure and operation of the MOS capacitor. 045 eV u Si 1. 8 shows a cross-section of a basic MOS capacitor. This structure is identical to a MOS transistor except that the source and drain diffusion regions are omitted.

1 Quality ....... . . . . . . . . 2 Reliability ....... . . . . . . . . 6 Potential first silicon problems .. ........ . . 1 Problems with testing ..... . . . . . 2 Problems caused by marginal or out-of-specification processing ...... . . . . . . . 3 Problems caused by marginal design .... . . 7 First-silicon debug and failure analysis . . . 10 Design for Failure Analysis and Design for Debug. 8 Conclusions ............ ... ... . 9 References .............

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